 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DATA SHEET MOS Field Effect Power Transistors 2SK2723 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS (in millimeter) 10.0 0.3 3.2 0.2 4.5 0.2 2.7 0.2 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications. 15.0 0.3 3 0.1 4 0.2 * Low On-Resistance RDS (on) 1 = 40m Max. (VGS = 10 V, ID = 13 A) RDS (on) 2 = 60m Max. (VGS = 4 V, ID = 13 A) Ciss = 830 pF Typ. * Low Ciss * Built-in G-S Protection Diode * Isolated TO-220 Package 0.7 0.1 2.54 1.3 0.2 1.5 0.2 2.54 13.5MIN. 12.0 0.2 FEATURES 2.5 0.1 0.65 0.1 1.Gate 2.Drain 3.Source 123 MP-45F (ISOLATED TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (TA = 25 C) Total Power Dissipation (Tc = 25 C) Channel Temperature Storage Temperature *PW 10 s, Duty Cycle 1% The diode connected between the gate and source of the transistor serves as a protector against ESD. When this deveice acutally used, an addtional protection circiut is externally required if voltage exceeding the rated voltage may be applied to this device. VDSS VGSS ID (DC) ID (pulse) PT PT Tch Tstg 60 20 25 100 2.0 25 150 -55 to +150 V V A A W W C C Gate Drain Body Diode Gate Protection Diode Source The information in this document is subject to change without notice. Document No. D10623EJ2V0DS00 (2nd edition) Date Published April 1996 P Printed in Japan (c) 1994 2SK2723 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS (on) 1 RDS (on) 2 VGS (off) y fs TEST CONDITIONS VGS = 10 V, ID = 13 A VGS = 4 V, ID = 13 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 13 A VDS = 60 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 13 A VGS (on) = 10 V VDD = 30 V RG = 10 ID = 25 A VDD = 48 V VGS = 10 V IF = 25 A, VGS = 0 IF = 25 A, VGS = 0 di/dt = 100 A/s MIN. TYP. 28 45 MAX. 40 60 2.0 UNIT m m V S 1.0 8.0 1.6 18 IDSS IGSS Ciss Coss Crss td (on) tr td (off) tf QG QGS QGD VF (S-D) tr r Qr r 10 10 830 430 185 21 185 100 110 35 2.8 15 1.0 60 125 A A pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Switching Time Test Circuit 2 Gate Charge D.U.T RL VGS PG. RG RG = 10 Wave Form VGS 0 10 % ID 90 % 90 % ID ID Wave Form D.U.T IG = 2 mA VGS (on) 90 % PG. 50 RL VDD VDD VGS 0 t t = 1s Duty Cycle 1 % 0 10 % td (on) ton tr td (on) toff 10 % tr 2 2SK2723 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 35 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 30 25 20 15 10 5 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 TC - Case Temperature - C TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS=20V VGS=10V Pulsed FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) Lm it ed PW ID(DC) ID - Drain Current - A 10 R DS n (o ) ID - Drain Current - A 1m 10 m =1 00 100 s s 80 60 40 20 s DC 1 VGS=4V TC = 25 C 0.1 Single Pulse 0.1 1 10 100 0 2 4 6 8 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed ID - Drain Current - A 100 10 Tch=-25C 25C 75C 125C 1 VDS=10V 0 1 2 3 4 5 6 7 8 VGS- Gate to Source Voltage - V 3 2SK2723 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W Rth(ch-a)=62.5C/W 100 10 Rth(ch-c)=5.0C/W 1 0.1 0.01 Single Pulse 0.001 10 100 1m 10m 100m 1 10 100 1 000 PW - Pulse Width - s RDS(on) - Drain to Source On-State Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT yfs - Forward Transfer Admittance - S 1000 VDS=10V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 60 100 Tch=-25C 25C 75C 125C 40 ID=13A 10 20 1 1 10 100 1 000 ID - Drain Current - A 0 10 20 30 VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 VGS(off) - Gate to Source Cutoff Voltage - V Pulsed 2.0 VDS = 10 V ID = 1 mA 60 VGS=4V 40 1.5 1.0 20 VGS=10V 0.5 0 0 - 50 0 50 100 150 Tch - Channel Temperature - C 1 10 ID - Drain Current - A 100 4 2SK2723 RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ISD - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 80 VGS=4V 100 VGS=10V 10 VGS=0 60 40 VGS=10V 20 ID = 13A - 50 0 50 100 150 1 0.1 0 0.5 1.0 1.5 0 Tch - Channel Temperature -C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS 1 000 tr tf 100 td(off) td(on) 10 VGS = 0 f = 1 MHz 1 000 Ciss Coss 100 Crss 10 0.1 1 10 100 1 0.1 VDD =30V VGS =10V RG =10 1 10 100 ID - Drain Current - A VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DIODE CURRENT 1 000 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V di/dt =100A/ s VGS = 0 60 VDD=12V 30V 48V VGS 12 10 8 6 100 40 10 20 VDS 0 10 20 30 40 4 2 0 1 0.1 1 10 100 IF - Dionde Current - A QG - Gate Charge - nC VGS - Gate to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 80 ID = 25A 14 5 2SK2723 REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 C10535E C10943X MEI-1202 X10679E TEA-1034 TEA-1035 TEA-1037 6 2SK2723 [MEMO] 7 2SK2723 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 |
Price & Availability of 2SK2723
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |